DocumentCode :
1608379
Title :
Reliability limits of TMR implemented in a SRAM-based FPGA: Heavy ion measures vs. fault injection predictions
Author :
Foucard, G. ; Peronnard, P. ; Velazco, R.
Author_Institution :
Lab. TIMA, Grenoble, France
fYear :
2010
Firstpage :
1
Lastpage :
5
Abstract :
This paper presents experimental results putting in evidence the weaknesses of TMR strategy implemented in SRAM-based FPGAs. Results obtained from radiation ground testing are confronted to fault injection campaigns.
Keywords :
SRAM chips; electrical faults; field programmable gate arrays; integrated circuit reliability; integrated circuit testing; ion beam effects; SRAM-based FPGA; TMR strategy; fault injection predictions; heavy ion measures; radiation ground testing; reliability limits; triple modular redundancy technique; Argon; Carbon; Circuit faults; Encryption; Field programmable gate arrays; Ions; Tunneling magnetoresistance; FPGA; SRAM; TMR; fault injections; heavy ions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Workshop (LATW), 2010 11th Latin American
Conference_Location :
Pule del Este
Print_ISBN :
978-1-4244-7786-9
Electronic_ISBN :
978-1-4244-7785-2
Type :
conf
DOI :
10.1109/LATW.2010.5550337
Filename :
5550337
Link To Document :
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