Title :
Computer simulation of photosensitive sensors based on polysilicon p/i and p/i/n structures
Author :
Aleksandrova, P.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
In this paper, a semiconductor device simulator PC1D is used to investigate the behavior of photosensitive polycrystalline p/i and p/i/n structures. The main physical characteristics - impurity concentrations, diffusion lengths, bulk and surface recombinations are varied in a wide range. The junction depths and thicknesses of the constituent layers are fixed. The obtained electrical characteristics for both photosensitive structures are compared. On the basis of the obtained results, photosensitive sensor optimized structures are proposed. It is shown that PC1D can be successfully applied for the simulation of polycrystalline photosensitive structures.
Keywords :
electron-hole recombination; elemental semiconductors; impurity distribution; optimisation; photodetectors; semiconductor device models; silicon; surface recombination; Si; bulk recombination; constituent layer thickness; diffusion length; impurity concentration; junction depth; p/i structures; p/i/n structures; photosensitive polycrystalline structures; photosensitive sensor optimization; surface recombination; Charge carrier processes; Computational modeling; Computer simulation; Doping; Optical films; Physics; Radiative recombination; Semiconductor devices; Spontaneous emission; Temperature;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490843
