DocumentCode
1608506
Title
Analysis of Material Science Problems in High-power LED Process
Author
Zhou, YingYuan ; Li, ShuZhi ; Dai, WeiFeng ; Li, YueSheng
Author_Institution
Project Dept., Shanghai Res. Center of Eng. & Technol. for Solid-State Lighting, Shanghai, China
fYear
2012
Firstpage
232
Lastpage
235
Abstract
This article explains the roles and material science problems of passivation layer, metal bonding, phosphor and Distributed Bragg Reflector in GaN-based LED device process, and introduces the methods and related processes to solve these problems from the view of material science.
Keywords
III-V semiconductors; distributed Bragg reflectors; gallium compounds; light emitting diodes; passivation; phosphors; wide band gap semiconductors; GaN; distributed Bragg reflector; high-power LED processing; material science problems; metal bonding; passivation layer; phosphor; Bonding; Gallium nitride; Light emitting diodes; Materials; Metals; Passivation; Phosphors; Compound Semiconductor; Distributed Bragg Reflector (DBR); Gallium Nitride (GaN); Light Emitting Diode (LED); Metal Bonding; Passivation Layer; Phosphor;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Control and Electronics Engineering (ICICEE), 2012 International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-1450-3
Type
conf
DOI
10.1109/ICICEE.2012.68
Filename
6322357
Link To Document