Title :
110nm NROM technology for code and data flash products
Author :
Willer, Josef ; Ludwig, Christoph ; Deppe, Joachim ; Kleint, Christoph ; Riedel, Stephan ; Sachse, Jens-Uwe ; Krause, Mathias ; Mikalo, Ricardo ; Kamienski, Elard Stein V ; Parascandola, Stefano ; Mikolajick, Thomas ; Fischer, Jan-Malte ; Isler, Mark ; Ku
Author_Institution :
Infineon Technol. Flash, Dresden, Germany
Abstract :
A novel NROM generation with a bit size of 0,043 μm2/bit at a 110nm design rule is introduced. The concept features mainstream CMOS type cell devices in conjunction with a metal contact based virtual ground array architecture. The new technology node serves both advanced code flash products and file storage memories up to 2 Gbit/die.
Keywords :
VLSI; flash memories; nanotechnology; read-only storage; 110 nm; 110nm NROM technology; CMOS type cell devices; code products; data flash products; metal contact; storage memories; virtual ground array architecture; Annealing; CMOS technology; Costs; Dielectrics; Furnaces; Implants; Integrated circuit interconnections; MOSFETs; Nonvolatile memory; Space technology;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345402
