• DocumentCode
    1608811
  • Title

    110nm NROM technology for code and data flash products

  • Author

    Willer, Josef ; Ludwig, Christoph ; Deppe, Joachim ; Kleint, Christoph ; Riedel, Stephan ; Sachse, Jens-Uwe ; Krause, Mathias ; Mikalo, Ricardo ; Kamienski, Elard Stein V ; Parascandola, Stefano ; Mikolajick, Thomas ; Fischer, Jan-Malte ; Isler, Mark ; Ku

  • Author_Institution
    Infineon Technol. Flash, Dresden, Germany
  • fYear
    2004
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    A novel NROM generation with a bit size of 0,043 μm2/bit at a 110nm design rule is introduced. The concept features mainstream CMOS type cell devices in conjunction with a metal contact based virtual ground array architecture. The new technology node serves both advanced code flash products and file storage memories up to 2 Gbit/die.
  • Keywords
    VLSI; flash memories; nanotechnology; read-only storage; 110 nm; 110nm NROM technology; CMOS type cell devices; code products; data flash products; metal contact; storage memories; virtual ground array architecture; Annealing; CMOS technology; Costs; Dielectrics; Furnaces; Implants; Integrated circuit interconnections; MOSFETs; Nonvolatile memory; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345402
  • Filename
    1345402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1608811