Capacitive RF MEMS switches using ultrananocrystalline diamond films

Author

Lebedeva, A. ; Alagashev, G.

Author_Institution

JSC Bazovye Techno., Moscow, Russia

fYear

2014

fDate

3-5 Feb. 2014

Firstpage

54

Lastpage

56

Abstract

This paper presents the designs, calculated by means of finite element method simulations characteristics and proposes fabrication process of a shunt and a series capacitive RF MEMS switches. Instead of traditional dielectric materials ultrananocrystalline diamond (UNCD) is used as an insulator layer of capacitive switches. These switches demonstrate isolation around 19-20 dB and loss around 0.3-0.4 dB at 10 GHz. The switches are candidates for high power microwave applications with high reliability due to unique charging characteristics of UNCD films.

Keywords

diamond; dielectric materials; films; finite element analysis; microswitches; nanostructured materials; C; UNCD; charging characteristics; dielectric materials ultrananocrystalline diamond; fabrication process; finite element method simulations characteristics; frequency 10 GHz; high power microwave applications; insulator layer; series capacitive RF MEMS switches; shunt capacitive RF MEMS switches; ultrananocrystalline diamond films; Diamonds; Electrodes; Micromechanical devices; Microswitches; Radio frequency; Reliability; Microelectromechanical systems (MEMS); RF MEMS switches; ultrananocrystalline diamond (UNCD);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronic Engineering Conference (ElConRusNW), Proceedings of the 2014 IEEE NW Russia Young Researchers in

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-2593-3

Type

conf

DOI

10.1109/ElConRusNW.2014.6839200

Filename

6839200