Title :
Symmetrical 45nm PMOS on [110] substrate with excellent S/D extension distribution and mobility enhancement
Author :
Hwang, J.R. ; Ho, J.H. ; Liu, Y.C. ; Shen, J.J. ; Chen, W.J. ; Chen, D.F. ; Liao, W.S. ; Hsieh, Y.S. ; Lin, W.M. ; Hsu, C.H. ; Lin, H.S. ; Lu, M.F. ; Kuo, Annie ; Huang-Lu, S. ; Tang, Howard ; Chen, David ; Shiau, W.T. ; Liao, K.Y. ; Sun, S.W.
Author_Institution :
Central R&D Div., United Microelectron. Corp., Hsin-Chu, Taiwan
Abstract :
For the first time, 45 nm PMOS devices on the only 4-fold symmetry zone of [110] surface substrates were demonstrated with excellent diffusion control in the S/D extension region. A 30% drive current enhancement was observed compared to devices on conventional (100) substrates with <110> channel. Resistance to gate oxide interface generation induced by charge injection stress is increased by 2 times. Improved 1/f noise characteristics were also observed on [110] surface substrates, especially when devices operate at the linear region.
Keywords :
1/f noise; MOSFET; VLSI; nanotechnology; semiconductor device noise; 1/f noise characteristics; 45 nm; [110] substrate; excellent S/D extension distribution; mobility enhancement; symmetrical 45nm PMOS; Boron; CMOS technology; Cities and towns; Doping profiles; MOS devices; Microelectronics; Research and development; Stress; Sun; Surface resistance;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345410
