DocumentCode :
1609110
Title :
Analysis of single electron tunnelling oscillations in long arrays of tunnel junctions
Author :
Babiker, S.F. ; Bedri, Abdelkareem
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Khartoum, Khartoum, Sudan
fYear :
2012
Firstpage :
283
Lastpage :
286
Abstract :
Many single electron tunneling (SET) devices have been proposed to function as voltage or current dependent oscillators. Modeling the behavior of such devices in time and frequency domains is therefore needed in order to understand and predict the coherence and stability of the resulting oscillations. This paper presents a model that captures the statistics of the time domain properties together with the power spectral density of the SET signal. The technique is based on the determination of the distribution of time between events at a reference output junction. The model is then used to study the coherence of oscillations in long arrays of quantum dots. It is shown that longer arrays would generate more coherent oscillations than shorter arrays. The technique presented in this paper could be extended to simulate and study other SET configurations.
Keywords :
frequency-domain analysis; quantum dots; single electron devices; time-domain analysis; SET devices; SET signal; current dependent oscillators; frequency-domain analysis; long arrays; power spectral density; quantum dots; reference output junction; single electron tunnelling oscillation analysis; time-domain analysis; tunnel junctions; voltage dependent oscillators; Coherence; Frequency-domain analysis; Junctions; Noise; Oscillators; Quantum dots; Tunneling; quantum dots; single electron tunnelling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), 2012 6th International Conference on
Conference_Location :
Sousse
Print_ISBN :
978-1-4673-1657-6
Type :
conf
DOI :
10.1109/SETIT.2012.6481929
Filename :
6481929
Link To Document :
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