Title :
Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA
Author :
Jeamsaksiri, W. ; Mercha, A. ; Ramos, J. ; Linten, D. ; Thijs, S. ; Jenei, S. ; Detcheverry, C. ; Wambacq, Piet ; Velghe, R. ; Decoutere, S.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz fmax -150GHz fT) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.
Keywords :
CMOS integrated circuits; MOSFET; millimetre wave integrated circuits; radiofrequency amplifiers; system-on-chip; 150 GHz; 200 GHz; 5GHz LNA; 90 nm; 90nm RF CMOS technology; high Q passive components; low power RF systems on chip; maximum measurement frequency; monolithic 5GHz low noise amplifier; CMOS technology; Current measurement; Low-noise amplifiers; MOSFETs; Performance evaluation; Performance gain; Portfolios; Radio frequency; Radiofrequency amplifiers; System-on-a-chip;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345416
