Title :
Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO2) gate dielectric
Author :
Thean, A.V.-Y. ; Vandooren, A. ; Kalpat, S. ; Du, Y. ; To, I. ; Hughes, J. ; Stephens, T. ; Goolsby, B. ; White, T. ; Barr, A. ; Mathew, L. ; Huang, M. ; Egley, S. ; Zavala, M. ; Eades, D. ; Sphabmixay, K. ; Schaeffer, J. ; Triyoso, D. ; Rossow, M. ; Roan
Author_Institution :
Semicond. Products Sector, Motorola Inc., Austin, TX, USA
Abstract :
In this paper, we report the performance and reliability of sub-100nm TaSiN metal gate fully depleted SOI devices with high-k gate dielectric. Performance differences between fully-depleted and partially-depleted devices are highlighted. This is also the first time that an unique asymmetric degradation phenomenon between electron and hole mobility in metal/high-k devices is reported. Despite the use of high-k dielectric, we show that these devices exhibit superior reliability, noise and analog circuit performances.
Keywords :
MOSFET; dielectric thin films; hafnium compounds; permittivity; semiconductor device reliability; silicon compounds; silicon-on-insulator; tantalum compounds; 100 nm; HfO2; HfO2 gate dielectric; TaSiN; analog circuit performances; electron mobility; fully-depleted devices; hole mobility; noise; partially-depleted devices; performance; reliability; sub-100nm TaSiN metal gate fully-depleted SOI devices; Analog circuits; Degradation; Dielectric devices; Doping; Electron mobility; Fluctuations; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Silicon on insulator technology;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345420
