Performance characteristics of a single walled Carbon Nanotube Field Effect Transistor (SWCNT-FET)

Intel´s co-founder Gordon Moore hypothesized that the transistor number would double every couple of years. Hence device scaling became inevitable. But soon researchers realized that there is a limit to scaling these silicon MOSFETs. Currently, Carbon Nanotube Field Effect Transistors (CNTFET) as an alternative are slowly replacing silicon MOSFETs. But the way we know exact circuit level equations for MOSFETs, we know only abstract model equations for carbon nanotubes. In this paper we aim to simulate certain parameters of the CNTFET when the diameter and gate insulator thickness is changed. This would help to predict the device performance and thus in the future help to build complex circuits consisting of CNTFETs. Parameters like, mobile charges, drain currents etc with changing diameter of the nanotubes and gate insulator thickness are studied.