Title :
Direct measurement of barrier height at the HfO2/poly-Si interface: Band structure and local effects
Author :
Pantisano, Luigi ; Chen, P.J. ; Afanas´ev, V. ; Ragnarsson, L.k. ; Pourtois, G. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this study comprehensive experimental measurements together with a physical picture demonstrate that, regardless of poly-Si doping, the defects creation in the dielectric close to the poly-Si/HfO2 interface is responsible for the observed effective WF change. These defects are amphoteric and spatially nonuniformly distributed.
Keywords :
MOSFET; band structure; hafnium compounds; interface states; semiconductor device measurement; silicon; HfO2-Si; HfO2/poly-Si interface; band structure; barrier height; Capacitance-voltage characteristics; Current measurement; Dielectric materials; Dielectric measurements; Electrodes; Electrons; Hafnium oxide; Instruments; MOS devices; Voltage;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345429
