DocumentCode :
1609597
Title :
Resistance strain sensors based on quasi-one-dimension Ph3MeP(TCNQ)2 crystals
Author :
Saleem, M. ; Karimov, Kh.S. ; Saeed, M.T.
Author_Institution :
Gov. Coll. Township, Lahore, Pakistan
fYear :
2011
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, the experimental results on the investigation of electric properties of organic semiconductor resistance strain sensors based on quasi-one dimensional ion-radical salts of tetracyanoquinodimethane and three phenyl methyl phosphonium [Ph3MeP(TCNQ)2] are described. It was observed that the sensitivity of the resistance strain sensors based on twinned crystals is significantly larger than that of uniform crystals.
Keywords :
crystals; organic semiconductors; strain sensors; organic semiconductor resistance strain sensors; phenyl methyl phosphonium; quasione dimensional ion-radical salt; quasione-dimension crystal; tetracyanoquinodimethane; twinned crystal; Capacitive sensors; Crystals; Piezoresistance; Sensitivity; Strain; phenyl methyl phosphonium-tetracyanoquinodimethane; piezoresistive material; resistance strain sensitivity; strain sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-0068-2
Electronic_ISBN :
978-1-4577-0067-5
Type :
conf
DOI :
10.1109/SIECPC.2011.5876901
Filename :
5876901
Link To Document :
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