Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

Author

Alsubaie, B.F. ; BenSaleh, Mohammed S. ; Alatawi, A.A. ; He, Liang ; Kou, Xufeng ; Yu, Xinxin ; Wang, Kang L. ; Guan Huang ; Faxian Xiu

Author_Institution

King Abdulaziz City for Sci. & Technol., Riyadh, Saudi Arabia

fYear

2011

Firstpage

1

Lastpage

4

Abstract

We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure was also realized and strong photoluminescence spectra at 1200nm were observed at 80K.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanostructured materials; optoelectronic devices; photoluminescence; silicon; GaAs-InAs-GaAs; GaAs-Si; Si; hexagonal shaped crystal; low-energy {011} planes; molecular beam epitaxy; optoelectronics applications; photoluminescence spectra; rectangular shaped crystal; selectively-grown III-V compound semiconductor microstructure; selectively-grown III-V compound semiconductor nanostructure; silicon; silicon substrates; silicon-dioxide-masked nanoholes; single-crystalline nature; temperature 80 K; wavelength 1200 nm; Gallium arsenide; Photoluminescence; Quantum dot lasers; Silicon; Substrates; Surface morphology; GaAs; epitaxial growth; nanostructure; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International

Conference_Location

Riyadh

Print_ISBN

978-1-4577-0068-2

Electronic_ISBN

978-1-4577-0067-5

Type

conf

DOI

10.1109/SIECPC.2011.5876906

Filename

5876906