Title :
On the defect generation and low voltage extrapolation of QBD in SiO2/HfO2 stacks
Author :
Degraeve, R. ; Crupi, F. ; Kwak, D.H. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite QBD at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate IG at low VG and limit the yield.
Keywords :
CMOS integrated circuits; dielectric thin films; hafnium compounds; semiconductor-insulator boundaries; silicon compounds; SiO2-HfO2; SiO2/HfO2 stacks; defect generation; low voltage extrapolation; trap generation threshold; CMOS technology; Capacitors; Degradation; Dielectrics; Electric breakdown; Energy states; Extrapolation; Hafnium oxide; Hysteresis; Low voltage;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345440
