• DocumentCode
    1609786
  • Title

    On the defect generation and low voltage extrapolation of QBD in SiO2/HfO2 stacks

  • Author

    Degraeve, R. ; Crupi, F. ; Kwak, D.H. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2004
  • Firstpage
    140
  • Lastpage
    141
  • Abstract
    The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite QBD at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate IG at low VG and limit the yield.
  • Keywords
    CMOS integrated circuits; dielectric thin films; hafnium compounds; semiconductor-insulator boundaries; silicon compounds; SiO2-HfO2; SiO2/HfO2 stacks; defect generation; low voltage extrapolation; trap generation threshold; CMOS technology; Capacitors; Degradation; Dielectrics; Electric breakdown; Energy states; Extrapolation; Hafnium oxide; Hysteresis; Low voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345440
  • Filename
    1345440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609786