• DocumentCode
    1610124
  • Title

    On the integration of CMOS with hybrid crystal orientations

  • Author

    Yang, M. ; Chan, V. ; Ku, S.H. ; Ieong, M. ; Shi, L. ; Chan, K.K. ; Murthy, C.S. ; Mo, R.T. ; Yang, H.S. ; Lehner, E.A. ; Surpris, Y. ; Jamin, F.F. ; Oldiges, P. ; Zhang, Y. ; To, B.N. ; Holt, J.R. ; Steen, S.E. ; Chudzik, M.P. ; Fried, D.M. ; Bernstein,

  • Author_Institution
    IBM Semicond. Res. & Dev. Center, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2004
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with Lpoly about 85nm and tox=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.
  • Keywords
    CMOS integrated circuits; crystal orientation; integrated circuit design; silicon-on-insulator; 2.2 nm; 85 nm; CMOS; design; device isolation; dopant implantation; epitaxy; hybrid crystal orientations; hybrid orientation technology; integration; CMOS process; CMOS technology; Chemical technology; Circuit optimization; Epitaxial growth; Fabrication; MOSFETs; Research and development; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345455
  • Filename
    1345455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1610124