Title :
On the integration of CMOS with hybrid crystal orientations
Author :
Yang, M. ; Chan, V. ; Ku, S.H. ; Ieong, M. ; Shi, L. ; Chan, K.K. ; Murthy, C.S. ; Mo, R.T. ; Yang, H.S. ; Lehner, E.A. ; Surpris, Y. ; Jamin, F.F. ; Oldiges, P. ; Zhang, Y. ; To, B.N. ; Holt, J.R. ; Steen, S.E. ; Chudzik, M.P. ; Fried, D.M. ; Bernstein,
Author_Institution :
IBM Semicond. Res. & Dev. Center, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with Lpoly about 85nm and tox=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.
Keywords :
CMOS integrated circuits; crystal orientation; integrated circuit design; silicon-on-insulator; 2.2 nm; 85 nm; CMOS; design; device isolation; dopant implantation; epitaxy; hybrid crystal orientations; hybrid orientation technology; integration; CMOS process; CMOS technology; Chemical technology; Circuit optimization; Epitaxial growth; Fabrication; MOSFETs; Research and development; Silicon; Substrates;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345455
