Title :
Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique
Author :
Kinoshita, A. ; Tsuchiya, Y. ; Yagishita, A. ; Uchida, K. ; Koga, J.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
Keywords :
MOSFET; Schottky barriers; segregation; semiconductor doping; CoSi2; Schottky barrier height; dopant segregation technique; high-performance Schottky-source/drain MOSFETs; Conducting materials; Doping; Laboratories; Large scale integration; Leakage current; MOSFETs; Research and development; Schottky barriers; Silicidation; Silicides;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345459
