DocumentCode :
1610469
Title :
A fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator in 0.15-µm PHEMT process
Author :
Lin, Chi-Hsien ; Li, Wen-Ping ; Chang, Hong-Yeh
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2011
Firstpage :
864
Lastpage :
867
Abstract :
This paper describes a fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator (VCO) in 0.15-μm GaAs pseudomorphic high-electron mobility transistor (PHEMT) process. The proposed power VCO is based on a class-E topology with a π-feedback network. The proposed class-E power VCO achieves an output power of 27 dBm with an efficiency of 42.5%, when the dc supply voltage is 6 V with a current consumption of 196 mA. The phase noise is -118.33 dBc/Hz at 1-MHz offset. The frequency tuning range with various dc supply voltage is from 2.29 to 2.45 GHz. The chip size of the class-E power VCO is 2×2 mm2. This work has the highest efficiency among the reported fully integrated power oscillators using HEMT technologies.
Keywords :
HEMT integrated circuits; UHF integrated circuits; gallium arsenide; voltage-controlled oscillators; π-feedback network; GaAs; PHEMT; class-E voltage controlled oscillator; current 196 mA; frequency 1 MHz; frequency 2.29 GHz to 2.45 GHz; frequency 2.4 GHz; frequency tuning; integrated power oscillators; power 0.5 W; pseudomorphic high-electron mobility transistor; size 0.15 mum; voltage 6 V; Logic gates; Power amplifiers; Power generation; Radio frequency; Voltage measurement; Voltage-controlled oscillators; class-E; efficiency; monolithic microwave integrated circuit (MMIC); oscillator; phase noise; pseudomorphic high-electron mobility transistor (PHEMT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
Type :
conf
Filename :
6173888
Link To Document :
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