Title :
Millimeter Wave Propagation in GaAs and Si Two-Layer Dielectric Rod Waveguides
Author :
Lyubchenko, V.E. ; Briantseva, T.A. ; Dudorov, S.N. ; Lioubtchenko, D.V. ; Markov, I.A. ; Markov, R.I. ; Raisanen, A.V.
Author_Institution :
Russian Acad. of Sci., Moscow
Abstract :
Traveling wave mode transformation in GaAs and Si dielectric rod waveguides at frequencies 75 -110 GHz is experimentally studied. The influence of p-n and i-n junction capacitance is noticed as a varactor type component ,that imposes new applications of two layer structures in millimeter wave integrated circuits.
Keywords :
dielectric waveguides; gallium arsenide; millimetre wave integrated circuits; millimetre wave propagation; silicon; GaAs two-layer dielectric rod waveguides; Si two-layer dielectric rod waveguides; frequency 75 GHz to 110 GHz; i-n junction capacitance; millimeter wave integrated circuits; millimeter wave propagation; p-n junction capacitance; Attenuation; Capacitance; Delay; Dielectrics; Electromagnetic waveguides; Frequency; Gallium arsenide; Millimeter wave propagation; P-n junctions; Semiconductor waveguides;
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
DOI :
10.1109/MIKON.2006.4345328
