An l-band SiGe HBT inductorless Colpitts VCO using parasitic reactance of lumped elements for higher frequency oscillation

Author

Itoh, Yasushi ; Sakamoto, Kazuyoshi ; Tashiro, Yutaka

Author_Institution

Electr. & Inf. Eng., Shonan Inst. of Technol., Fujisawa, Japan

fYear

2011

Firstpage

872

Lastpage

875

Abstract

A new inductorless Colpitts VCO is presented. In place of a traditional LC-resonator, it employs an inductorless resonator and includes the parasitic reactance of chip capacitors in the design of the resonator to achieve a high cutoff frequency. The implemented inductorless Colpitts VCO has achieved a tuning frequency from 1.46 to 1.69GHz, an output power greater than -15.2dBm, a consumed power less than 14.2mW and phase noise at 100kHz offset in an range from -108 to -101dBc/Hz.

Keywords

Ge-Si alloys; UHF oscillators; heterojunction bipolar transistors; voltage-controlled oscillators; L-band HBT inductorless Colpitts VCO; SiGe; chip capacitors; frequency 1.46 GHz to 1.69 GHz; frequency 100 kHz; higher frequency oscillation; inductorless resonator; lumped elements; parasitic reactance; traditional LC-resonator; Current measurement; Cutoff frequency; Frequency measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators; Colpitts oscillator; SiGe HBT; VCO; lumped element; microwave; parasitic reactance; varactor diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173890