Dual workfunction fully silicided metal gates

Author

Cabral, C., Jr. ; Kedzierski, J. ; Linder, B. ; Zafar, S. ; Narayanan, V. ; Fang, S. ; Steegen, A. ; Kozlowski, P. ; Carruthers, R. ; Jammy, R.

Author_Institution

Semicond. Res. & Dev. Center, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

Firstpage

184

Lastpage

185

Abstract

Fully silicided (FUSI), dual workfunction (WF), Ni monosilicide metal gates are demonstrated using Sb predoped polySi for setting the nFET WF and for the first time a combination of Al predoped polySi and a Ni(Pt) alloy silicide for the pFET WF. The combination of the Sb and Al predoped polySi along with the Ni(Pt)Si, allow for WFs spanning the Si band gap to within 0.2 eV of the band edges. With this large WF range the FUSI, dual WF, NiSi process is applicable for both high performance and low power CMOS applications. It is shown that the Al and Sb predoped polySi and the Ni(Pt)Si alloy have leakage currents equivalent to NiSi formed from intrinsic polySi. A fundamental voiding problem in the formation of CoSi₂ metal gates is also demonstrated, indicating the superiority of the NiSi gates.

Keywords

CMOS integrated circuits; MIS structures; metallic epitaxial layers; nickel; work function; Ni monosilicide metal gates; Sb predoped polySi; band gap; dual workfunction; fully silicided metal gates; leakage currents; low power CMOS applications; Annealing; Artificial intelligence; Breakdown voltage; Current measurement; Dielectric devices; FETs; Frequency measurement; Pulse measurements; Silicides; Tin alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345469

Filename

1345469