Gradient oxygen modulation for junctionless electric-double-layer IZO-based synaptic transistors

Junctionless electric-double layer (EDL) transistors with gradient oxygen modulated IZO layers are proposed to emulate the biological synapse. The threshold voltage of the junctionless EDL transistors is shifted from - 0.40 V to 0.48 V as increasing the oxygen partial pressure during IZO deposition. And the estimated energy consumption of an individual excitatory post-synaptic current (EPSC) synaptic process can be reduced when the threshold voltage of the junctionless IZO EDL synaptic transistors are shifted positively. Short-term plasticity (STP) and long-term potentiation (LTP) is also demonstrated in such junctionless IZO-based EDL synaptic transistor.