Analytical short-channel behavior models of Junctionless Cylindrical Surrounding-Gate MOSFETs

Author

Chunsheng Jiang ; Renrong Liang ; Jing Wang ; Jun Xu

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on parabolic approximation. Furthermore, the expression of electrostatic potential was used to derive the formulas for scale length, threshold voltage, subthreshold slope, and subthreshold drain current. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can serve as a guide in the design of JLCSG MOSFET circuits.

Keywords

MOSFET; Poisson equation; approximation theory; parabolic equations; semiconductor device models; 2D Poisson equation; 3D numerical simulator; JLCSG MOSFET circuit design; analytical electrostatic potential model; analytical short-channel behavior models; bias conditions; device parameters; junctionless cylindrical surrounding-gate MOSFETs; parabolic approximation; scale length; subthreshold drain current; subthreshold slope; threshold voltage; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFET; Mathematical model; Threshold voltage; analytical model; junctionless cylindrical surrounding-gate MOSFETs; short-channel effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839323

Filename

6839323