Title :
Analytical short-channel behavior models of Junctionless Cylindrical Surrounding-Gate MOSFETs
Author :
Chunsheng Jiang ; Renrong Liang ; Jing Wang ; Jun Xu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on parabolic approximation. Furthermore, the expression of electrostatic potential was used to derive the formulas for scale length, threshold voltage, subthreshold slope, and subthreshold drain current. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can serve as a guide in the design of JLCSG MOSFET circuits.
Keywords :
MOSFET; Poisson equation; approximation theory; parabolic equations; semiconductor device models; 2D Poisson equation; 3D numerical simulator; JLCSG MOSFET circuit design; analytical electrostatic potential model; analytical short-channel behavior models; bias conditions; device parameters; junctionless cylindrical surrounding-gate MOSFETs; parabolic approximation; scale length; subthreshold drain current; subthreshold slope; threshold voltage; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFET; Mathematical model; Threshold voltage; analytical model; junctionless cylindrical surrounding-gate MOSFETs; short-channel effects;
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
DOI :
10.1109/ISNE.2014.6839323
