DocumentCode :
161084
Title :
Demonstration of Germanium nMOSFETs with interface passivation of ozone pre-gate treatment and ozone ambient annealing
Author :
Lei Liu ; Mei Zhao ; Renrong Liang ; Jing Wang ; Jun Xu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
7-10 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
Germanium nMOSFETs with Ge/GeO2/HfO2/TiN gate stacks are fabricated and analyzed. The Ge/HfO2 interface is passivated using ozone pre-gate treatment and ozone ambient annealing method to form a Ge/GeO2/HfO2 gate stack. The fabricated devices show promising electrical characteristics. The peak electron mobility of 586 cm2/Vs reflects the effective passivation results of the dual ozone treatment method.
Keywords :
MOSFET; annealing; elemental semiconductors; germanium; germanium compounds; hafnium compounds; ozonation (materials processing); passivation; titanium compounds; Ge-GeO2-HfO2-TiN; dual ozone treatment method; electrical characteristics; electron mobility; gate stacks; germanium nMOSFETs; interface passivation; ozone ambient annealing method; ozone pre-gate treatment; Annealing; Gases; Germanium; Hafnium compounds; Logic gates; MOSFET; Passivation; germanium; nMOSFETs; ozone ambient annealing; ozone treatment; surface passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
Type :
conf
DOI :
10.1109/ISNE.2014.6839324
Filename :
6839324
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=161084
بازگشت