A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance

Author

Lee, Sung-Young ; Yoon, Eun-Jung ; Kim, Sung-Min ; Oh, Chang Woo ; Li, Ming ; Choi, Jeong-Dong ; Yeo, Kyouug-Hwan ; Kim, Min-Sang ; Cho, Hye-Jin ; Kim, Sung-Hwan ; Kim, Doug-Won ; Park, Donggun ; Kim, Kinam

Author_Institution

R&D Center, Samsung Electron. Co., Kyunggi-Do, South Korea

fYear

2004

Firstpage

200

Lastpage

201

Abstract

We demonstrate highly manufacturable sub-50 nm MBCFET with the I_on of 4.26 mA/ μm at V_DD = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.

Keywords

Ge-Si alloys; MOSFET; semiconductor epitaxial layers; semiconductor growth; silicon; 1.2 V; 50 nm; SiGe-Si-SiGe-Si; SiGe/Si/SiGe/Si layers; damascene gate process; enhanced mobility; extremely high performance; multiple epitaxial growth; sub-50 nm multi-bridge-channel MOSFET; vertically stacked channels; Bridge circuits; Epitaxial growth; Etching; Fabrication; MOSFET circuits; Manufacturing processes; Silicon compounds; Silicon germanium; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345478

Filename

1345478