Electrical quality of 28nm HK/MG MOSFETs with PDA and DPN treatment

Author

Win-Der Lee ; Chun-Wei Lian ; Shea-Jue Wang ; Yi-Hong Yu ; Cheng, Osbert ; Huang, L.S. ; Mu-Chun Wang

Author_Institution

Dept. of Electr. Eng., Lee-Ming Inst. of Technol., Taipei, Taiwan

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

4

Abstract

On the basis of tested data, the performance of NMOSFETs with PDA treatment in drive current, S.S. values and channel mobility is superior to that with DPN treatment. Comparing two nitridation treatment processes at the same annealing temperature, it seems that PDA proving the hydrogen to fix the dangling bond on the channel surface is more beneficial for device performance before the reliability test. Furthermore, the capability in healing of oxygen vacancy of gate dielectric is little better than that with DPN, illustrating in lower gate leakage, especially as the channel length is narrowed down.

Keywords

MOSFET; annealing; dangling bonds; high-k dielectric thin films; nitridation; plasma materials processing; semiconductor device reliability; vacancies (crystal); DPN treatment; HK/MG MOSFETs; NMOSFETs; PDA treatment; annealing temperature; channel mobility; channel surface; dangling bond; drive current; electrical quality; gate dielectric; gate leakage; high-k metal gate technology; low-pressure decoupled plasma nitridation process; oxygen vacancy; post deposition annealing; reliability test; size 28 nm; Annealing; Dielectrics; Gate leakage; Logic gates; MOSFET; Metals; decoupled plasma nitridation; gate dielectric; gate leakage; high-k; metal gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839328

Filename

6839328