Title :
Improvement of SIMS multilayer profile analysis
Author :
Boulakroune, M´Hamed ; Benatia, D.
Author_Institution :
Electr. Eng. Dept., Univ. Kasdi Merbah, Ouargla, Algeria
Abstract :
SIMS deconvolution of boron delta doped multilayer has been successfully performed using a synthetic algorithm without the requirement of specific and detailed knowledge of response functions from measurements of delta layers which often is not available. This algorithm is based on partial deconvolution and scale-frequency shrinkage. The contributions of high frequency noise are removed by scale-frequency shrinkage. The partial deconvolution addresses to remove the residual ion mixing effect. It is shown that this algorithm leads to an enhancement of the depth resolution by a factor 2 compared to that before deconvolution without producing artifacts and aberrations which are physically not accepted.
Keywords :
boron; deconvolution; high-frequency effects; multilayers; noise; secondary ion mass spectroscopy; signal resolution; SIMS deconvolution; SIMS multilayer profile analysis; boron delta doped multilayer; delta layers measurements; depth resolution enhancement; factor 2; high frequency noise; partial deconvolution-based algorithm; residual ion mixing effect; response functions; scale-frequency shrinkage; scale-frequency shrinkage-based algorithm; synthetic algorithm; Atomic measurements; Boron; Deconvolution; Noise; Oscillators; Shape; Signal processing algorithms; Multilayers; Partial deconvolution; SIMS; Scale-frequency shrinkage; depth resolution;
Conference_Titel :
Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), 2012 6th International Conference on
Conference_Location :
Sousse
Print_ISBN :
978-1-4673-1657-6
DOI :
10.1109/SETIT.2012.6482002