Title :
Different materials coating effect on responsivity of Si UV photo detector
Author :
Ghosh, Bijoy Kumar ; Kin, Kenneth Teo Tze ; Mohd Zainal, Saiful Sapri
Author_Institution :
Electr. & Electron. Eng. Programme, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia
Abstract :
The effect of different anti-reflective coating on responsivity of silicon photo detector has been successfully analyzed in this work. N-type highly pure crystalline c-Si wafer based P+N photo detector is fabricated using Silvaco TCAD software. Different materials such as aluminium oxide (Al2O3), zinc oxide (ZnO), silicon nitride (Si3N4), silicon dioxide (SiO2) and silicon carbide (SiC) are used as the anti-reflective coating. Different thickness of SiO2+Si3N4 anti reflective coating (window) layers are designed for simulation and analysis of solar spectrum response. Improvement of the responsivity in the silicon photo detector is obtained by applying different materials as its coating. Combination of SiO2 and Si3N4 dual layer anti-reflective coating is found promising for responsivity aspect.
Keywords :
II-VI semiconductors; aluminium compounds; antireflection coatings; elemental semiconductors; optical materials; photodetectors; silicon; silicon compounds; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Al2O3; N-type highly pure crystalline c-Si wafer; P+N photo detector; Si; Si3N4; SiC; SiO2; Silvaco TCAD software; UV photodetector; ZnO; antireflective coating; material coating effect; responsivity Improvement; solar spectrum response; window; Absorption; Coatings; Detectors; Photonic band gap; Photonics; Silicon; Silvaco TCAD; aluminium oxide; anti reflective coating; photo detector; silicon carbide; silicon dioxide; silicon nitride; zinc oxide;
Conference_Titel :
Clean Energy and Technology (CEAT), 2013 IEEE Conference on
Conference_Location :
Lankgkawi
Print_ISBN :
978-1-4799-3237-5
DOI :
10.1109/CEAT.2013.6775673
