Different materials coating effect on responsivity of Si UV photo detector

Author

Ghosh, Bijoy Kumar ; Kin, Kenneth Teo Tze ; Mohd Zainal, Saiful Sapri

Author_Institution

Electr. & Electron. Eng. Programme, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia

fYear

2013

Firstpage

446

Lastpage

449

Abstract

The effect of different anti-reflective coating on responsivity of silicon photo detector has been successfully analyzed in this work. N-type highly pure crystalline c-Si wafer based P+N photo detector is fabricated using Silvaco TCAD software. Different materials such as aluminium oxide (Al₂O₃), zinc oxide (ZnO), silicon nitride (Si₃N₄), silicon dioxide (SiO₂) and silicon carbide (SiC) are used as the anti-reflective coating. Different thickness of SiO₂+Si₃N₄ anti reflective coating (window) layers are designed for simulation and analysis of solar spectrum response. Improvement of the responsivity in the silicon photo detector is obtained by applying different materials as its coating. Combination of SiO₂ and Si₃N₄ dual layer anti-reflective coating is found promising for responsivity aspect.

Keywords

II-VI semiconductors; aluminium compounds; antireflection coatings; elemental semiconductors; optical materials; photodetectors; silicon; silicon compounds; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Al₂O₃; N-type highly pure crystalline c-Si wafer; P+N photo detector; Si; Si₃N₄; SiC; SiO₂; Silvaco TCAD software; UV photodetector; ZnO; antireflective coating; material coating effect; responsivity Improvement; solar spectrum response; window; Absorption; Coatings; Detectors; Photonic band gap; Photonics; Silicon; Silvaco TCAD; aluminium oxide; anti reflective coating; photo detector; silicon carbide; silicon dioxide; silicon nitride; zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Clean Energy and Technology (CEAT), 2013 IEEE Conference on

Conference_Location

Lankgkawi

Print_ISBN

978-1-4799-3237-5

Type

conf

DOI

10.1109/CEAT.2013.6775673

Filename

6775673