Title :
A novel combination FN/BBHH erase scheme for scaled SONOS device
Author :
Fengying Qiao ; Peng Zhu ; Liyang Pan ; Xuemei Liu ; Zhigang Zhang ; Jun Xu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper, a novel erase method combining Fowler-Nordheim (FN) and two-sided band to band hot hole (BBHH) erase schemes is proposed and applied in a Silicon-oxide-Nitride-Oxide-Nitride (SONOS) device with 4.5 nm thick bottom oxide, which can hardly be erased by FN tunneling. Results show that the new erase mechanism is promising for nanometer-scale SONOS memory especially when Oxide-Nitride-Oxide (ONO) stack has been optimized.
Keywords :
CMOS memory circuits; nanoelectronics; tunnelling; CMOS-compatible process; FN tunneling; FN-BBHH erase scheme; Fowler-Nordheim erase method; nanometer-scale SONOS memory; oxide-nitride-oxide stack; scaled SONOS device; silicon-oxide-nitride-oxide-nitride device; size 4.5 nm; two-sided band to band hot hole erase schemes; Charge pumps; Electron traps; Hot carriers; Logic gates; SONOS devices; Tunneling; Charge Pumping; Erase; SONOS;
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
DOI :
10.1109/ISNE.2014.6839330
