Compact physics-based model for ultrashort FinFETs

A fully explicit physics-based model for ultrashort undoped (or lightly doped) FinFETs is proposed. In particular, a new physical approach to account for short-channel effects is presented as an extension of the long channel model. The modeling of small geometry effects relies on the accurate description of the potential profile along the channel and in particular on the position of the minimum potential. This is achieved without using any empirical parameters. The impact of carrier mobility degradation is also studied and taken into account. This design-oriented model is valid and continuous in all operating regimes. Comparisons between the model and 3-D Silvaco simulations are performed and show the usefulness of this compact model for high-performance circuit design.