A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs 13×-C6D8C7F5F2

Author

Zafar, Sufi ; Lee, Byoung H. ; Stathis, James ; Callegari, Allesandro ; Ning, Tak

Author_Institution

IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

Firstpage

208

Lastpage

209

Abstract

A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO₂/Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO₂/poly, SiON/W and HfO₂/W pFETs. A comparison between high κ and conventional oxide is made.

Keywords

CMOS integrated circuits; MOSFET; elemental semiconductors; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; SiO₂-Si; SiO₂/Si interface; de-passivation; depassivated site density; negative bias temperature instability; Annealing; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Hydrogen; Negative bias temperature instability; Niobium compounds; Predictive models; Pulse measurements; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345483

Filename

1345483