Title :
High performance InxGa1−xN Tandem solar cells designed from numerical analysis
Author :
Akter, Nasrin ; Matin, Md Abdul ; Amin, N.
Author_Institution :
Int. Islamic Univ. Chittagong, Chittagong, Bangladesh
Abstract :
Multijunction tandem solar cells from compound materials are highly attractive for higher cell efficiency need to be applied in space applications. In this work, numerical simulations were conducted with novel promising InGaN compound material by utilizing AMPS simulator to explore the possibility of higher efficiency of the multi-junction tandem solar cell. This simulation was done with the different ratio of In and Ga content to investigate the optimum band gap combinations of tandem solar cells, and it has been found that the maximum conversion efficiency of the triple junction tandem solar cell is 42.34% (Voc =1.33V, Jsc=36.15mA/cm2, and FF =0.88) with this InGaN compound material. Finally, the stability of the designed cell has been investigated and found that the temperature coefficient (TC) of the proposed cell is -0.04%/°C which indicates the higher stability of the cell in stressed condition.
Keywords :
III-V semiconductors; indium compounds; numerical analysis; optimisation; solar cells; wide band gap semiconductors; AMPS simulator; InxGa1-xN; TC; analysis of microelectronic and photonic structures; cell efficiency; compound materials; multijunction tandem solar cells; numerical analysis; numerical simulations; optimum band gap combinations; space applications; temperature coefficient; voltage 1.33 V; Junctions; Materials; Numerical analysis; Numerical models; Photonic band gap; Photovoltaic cells; Thermal stability; Higher efficiency; InxGa1-xN; Numerical analysis by AMPS; Tandem solar cells;
Conference_Titel :
Clean Energy and Technology (CEAT), 2013 IEEE Conference on
Conference_Location :
Lankgkawi
Print_ISBN :
978-1-4799-3237-5
DOI :
10.1109/CEAT.2013.6775678
