Title :
Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs
Author :
Kim, Sun Jung ; Cho, Byung Jin ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B. ; Zhu, Chunxiang ; Chin, Albert ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO2 dielectrics. Capacitance density of 6 fF/ μm2 and VCC of 14 ppm/V2 achieved in this work are the best ever reported. The HfO2/SiO2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.
Keywords :
MIM devices; capacitors; mixed analogue-digital integrated circuits; SiO2; analog/mixed-signal ICs; high-k MIM capacitor; low leakage current; metal-insulator-metal; stable frequency dependence; stacked insulator structure; voltage nonlinearity; Capacitance; Dielectrics and electrical insulation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Metal-insulator structures; Voltage;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345489
