DocumentCode
1611095
Title
Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs
Author
Kim, Sun Jung ; Cho, Byung Jin ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B. ; Zhu, Chunxiang ; Chin, Albert ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2004
Firstpage
218
Lastpage
219
Abstract
It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO2 dielectrics. Capacitance density of 6 fF/ μm2 and VCC of 14 ppm/V2 achieved in this work are the best ever reported. The HfO2/SiO2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.
Keywords
MIM devices; capacitors; mixed analogue-digital integrated circuits; SiO2; analog/mixed-signal ICs; high-k MIM capacitor; low leakage current; metal-insulator-metal; stable frequency dependence; stacked insulator structure; voltage nonlinearity; Capacitance; Dielectrics and electrical insulation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Metal-insulator structures; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345489
Filename
1345489
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