DocumentCode
1611134
Title
High quality high-k MIM capacitor by Ta2O5/HfO2/Ta2O5 multi-layered dielectric and NH3 plasma interface treatments for mixed-signal/RF applications
Author
Jeong, Yong-kuk ; Won, Seok-Jun ; Kwon, Dae-jin ; Song, Min-Woo ; Kim, Weon-Hong ; Park, Moon-han ; Jeong, Joo-Hyun ; Oh, Han-Su ; Kang, Ho-Kyu ; Suh, Kwang-Pyuk
Author_Institution
Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
fYear
2004
Firstpage
222
Lastpage
223
Abstract
Novel high-k MIM capacitor technology for mixed-signal/RF applications has been successfully developed by introducing multilayered high-k dielectric(Ta2O5/HfO2/Ta2O5) and NH3 plasma electrode-dielectric interfaces treatments. For the first time, we have simultaneously achieved high capacitance of 4fF/um2 and low leakage current of 100nA/cm2 at high temperature of 125°C with ultra low VCC(a=16.9ppm/V2, b=5.2ppm/V) and high Q(∼107 at 2.4GHz and 5.4pF).
Keywords
MIM devices; ammonia; dielectric thin films; hafnium compounds; leakage currents; mixed analogue-digital integrated circuits; tantalum compounds; thin film capacitors; 125 degC; 2.4 GHz; NH3 plasma interface treatments; Ta2O5-HfO2-Ta2O5; Ta2O5/HfO2/Ta2O5 multi-layered dielectric; high quality high-k MIM capacitor; low leakage current; mixed-signal/RF applications; Capacitors; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Plasma applications; Plasma properties; Plasma temperature; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345491
Filename
1345491
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