DocumentCode
1611240
Title
A rapid analysis of very short channel MOSFET performances by using a dynamic simple model
Author
Rabhi, Abdelbaki ; Benhamadouche, Abdelouahab ; Charlot, Jean-jacques
Author_Institution
Dept. of Electron., Univ. Ferhat Abbas, Setif, Algeria
fYear
2010
Firstpage
381
Lastpage
384
Abstract
A simplified MOSFET model is presented in this paper. The performances of the model, UNICELL (Unique Cell Model), are compared to those provided by BSIM3V3 taken as reference, even for very short channel length MOSFET (45 nm). It is shown that using only two UNICELL cells (BICELL) gives a good deal for CAD static and dynamic usage, because of the few number of parameters to be used in comparison to BSIM3. BICELL can also be used for determining internal performance analysis.
Keywords
MOSFET; semiconductor device models; BICELL; BSIM3V3; CAD static; UNICELL; dynamic simple model; size 45 nm; unique cell model; very short channel MOSFET; Design automation; Hardware design languages; Load modeling; MOSFET circuits; Modulation; SPICE; Solid modeling; BSIM3V3; MOSFET Modeling; VERILOG-A;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Conference_Location
Warsaw
Print_ISBN
978-1-4244-7011-2
Electronic_ISBN
978-83-928756-4-2
Type
conf
Filename
5551289
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