First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation

Author

Han-Chi Lin ; Chiung-Yuan Lin ; Che-Ju Shih ; Bing-Yue Tsui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.

Keywords

Fermi level; Schottky barriers; ab initio calculations; contact resistance; doping; elemental semiconductors; germanium; germanium alloys; interface states; nickel alloys; segregation; semiconductor-metal boundaries; surface resistance; As segregation; Fermi-level pinning effect; NiGe-Ge:As; NiGe-n-type Ge contact; contact resistance; dopant segregation effects; first-principles calculations; physical Schottky barrier height; the interface states; Atomic layer deposition; Contact resistance; Junctions; Lattices; Photonic band gap; Schottky barriers; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839344

Filename

6839344