Title :
Record-low Injection-current Strained SiGe variable optical attenuator with optimized lateral PIN junction
Author :
Kim, Youngjae ; Fujikata, J. ; Takahashi, Satoshi ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We demonstrate record-low injection-current VOAs using strain-enhanced free-carrier absorption in SiGe. The strained SiGe VOA with optimized lateral PIN junction exhibits 20-dB attenuation by 20-mA/mm injection current. 2-GHz switching and error-free transmission of 50-Gbps WDM signal are also successfully demonstrated.
Keywords :
Ge-Si alloys; light absorption; light transmission; optical attenuators; wavelength division multiplexing; SiGe; WDM signal; bit rate 50 Gbit/s; error-free transmission; frequency 2 GHz; gain 20 dB; optimized lateral PIN junction; record-low injection-current VOA; record-low injection-current strained variable optical attenuator; strain-enhanced free-carrier absorption; switching transmission; Attenuation; Junctions; Optical attenuators; Optical device fabrication; Optical waveguides; Silicon; Silicon germanium;
Conference_Titel :
Optical Communication (ECOC), 2014 European Conference on
Conference_Location :
Cannes
DOI :
10.1109/ECOC.2014.6963927
