Title :
Optimization of DC-sputtered molybdenum back contact layers
Author :
Jhong-Hao Jiang ; Shou-Yi Kuo
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.
Keywords :
copper compounds; electrical resistivity; gallium compounds; indium compounds; semiconductor thin films; solar cells; sputter deposition; ternary semiconductors; CIGS solar cells; Cu(InGa)Se2-Mo; DC-sputtered molybdenum back contact layers; FWHM; electrical resistivity; thin films; Adhesives; Films; Grain size; Optimization; Photovoltaic cells; Resistance; Sputtering; CIGS solr cell; DC sputtering; Mo back contact layers;
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
DOI :
10.1109/ISNE.2014.6839351
