Title :
Biasing effect on improvement of linearity and efficiency of RF linear power amplifier
Author :
Tayel, Mazhar B. ; Al-Mslmany, Amir
Author_Institution :
Commun. & Electron. Dept., Alexandria Univ., Alexandria, Egypt
Abstract :
Based on bipolar junction transistor (BJT) modeling the theoretical analysis of biasing effect on improvement of linearity and efficiency of RF linear power amplifier (LPA) are introduced, according to these analysis and by using matlab curve fitting toolbox an analytical model for improvement of linearity and efficiency of RF linear power amplifiers (PAs) is introduced. This model simplifies the traditionally complicated methods of analysis of RF PA. According to a change of the DC bias as a function of the AC input signal of RF linear PA the linearity and efficiency can be improved.
Keywords :
bipolar transistors; curve fitting; mathematics computing; power amplifiers; radiofrequency amplifiers; semiconductor device models; BJT modeling; DC biasing effect; LPA; MATLAB curve fitting toolbox; RF linear power amplifier; bipolar junction transistor modeling; Analytical models; Equations; Integrated circuit modeling; Linearity; Mathematical model; Power amplifiers; Radio frequency; AC and DC analysis; BJT; biasing; curve fitting; efficiency; linearity;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-0068-2
Electronic_ISBN :
978-1-4577-0067-5
DOI :
10.1109/SIECPC.2011.5876971
