Title :
Analog performance of advanced CMOS in weak, moderate, and strong inversion
Author :
Bucher, Matthias ; Diles, George ; Makris, Nikos
Author_Institution :
Electron. & Comput. Eng. Dept., Tech. Univ. of Crete, Chania, Greece
Abstract :
Reduced overdrive voltage in advanced CMOS technology requires analog circuitry to operate in moderate and weak inversion. A systematic analysis of scaling of transconductance, output conductance and intrinsic gain with technology, channel length but also bias conditions is presented for a deep submicron CMOS process. The analog properties are represented versus normalized current, so as to provide an easy means of interpretation and comparison. Measured transconductances and derived quantities such as intrinsic gain are investigated for NMOS and PMOS devices of an 110 nm CMOS technology, covering a large range of channel length and inversion conditions. This reveals novel properties of advanced CMOS technology and some useful guidelines for designers are given.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit design; CMOS design; MOSFET; NMOS devices; PMOS devices; advanced CMOS technology; analog circuitry; channel length; deep submicron CMOS process; intrinsic gain; normalized current; output conductance; overdrive voltage reduction; size 110 nm; systematic analysis; transconductance scaling; CMOS integrated circuits; CMOS technology; Integrated circuit modeling; MOSFETs; Radio frequency; Transconductance; CMOS design; EKV MOSFET model; Transconductance; deep submicron; intrinsic gain; low-power design; low-voltage design; moderate inversion; scaling;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7011-2
Electronic_ISBN :
978-83-928756-4-2
