Title :
Patterned quantum dot molecule laser fabricated by electron beam lithography and wet chemical etching
Author :
Verma, V.B. ; Reddy, U. ; Dias, N.L. ; Bassett, K.P. ; Li, X. ; Coleman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
This study demonstrates the use of electronically coupled patterned quantum dots (QDs) fabricated using a wet-etching technique as the gain medium of a photonic device. This technique provides the unique ability to control both the spatial and spectral properties of QDs, while maintaining the high optical quality of the material necessary for photonics applications.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; energy states; etching; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; superradiance; 2D planar growth; 3D quantum confinement; GaAs; GaAs-Al0.75Ga0.25As-GaAs-In0.21Ga0.79As; amplified spontaneous emission spectrum; discrete energy states; edge-emitting laser; electron beam lithography; patterned quantum dot molecule laser; photoluminescence; spatial properties; spectral properties; vertically-coupled self-aligned quantum dots; wet chemical etching; Chemical lasers; Electron beams; Gallium arsenide; Lithography; Quantum computing; Quantum dot lasers; Quantum well lasers; Self-assembly; Semiconductor lasers; Wet etching;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421923
