Title :
Lasing in GaAs-based nanowires grown by selective-area MOVPE
Author :
Motohisa, J. ; Hua, B. ; Varadwaj, K.S.K. ; Hara, S. ; Hiruma, K. ; Fukui, T.
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
In this paper, lasing in GaAs-based nanowires grown by selective-area MOVPE are reported. Strong emission were seen from single nanowires in near-infrared region under cw excitation. A series of periodic peaks were appeared in photoluminescence spectra. Optically pumped lasing is deducted from above results.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; laser beams; nanofabrication; nanowires; optical materials; optical pumping; photoluminescence; quantum well lasers; semiconductor growth; GaAs; GaAs-GaAsP; MOVPE; continuous wave excitation; nanowires; near-infrared emission; optically pumping; photoluminescence; Epitaxial growth; Epitaxial layers; Gallium arsenide; Interference; Laser mode locking; Laser theory; Nanowires; Semiconductor lasers; Semiconductor materials; Substrates;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421925
