• DocumentCode
    161159
  • Title

    Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor

  • Author

    Libin Liu ; Zhigang Zhang ; Jing Wang ; Jun Xu ; Yi-Ting Lin ; Chao-Sung Lai

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    7-10 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pHpzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pHpzc.
  • Keywords
    ion sensitive field effect transistors; semiconductor device models; ISFET; ionic-sensitive field effect transistor; sensitivity characteristics; trapped charge; Capacitance; Electric potential; Field effect transistors; Ions; Logic gates; Sensitivity; Silicon; ISFET; flash; model; pH; sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2014 International Symposium on
  • Conference_Location
    Kwei-Shan
  • Type

    conf

  • DOI
    10.1109/ISNE.2014.6839361
  • Filename
    6839361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161159