Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection

Author

Aissat, A. ; Nacer, S. ; Aliane, H. ; Vilcot, J.P.

Author_Institution

Dept. of Electron., Univ. Saad Dahlab of Blida, Blida, Algeria

fYear

2011

Firstpage

1

Lastpage

3

Abstract

In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2-3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectors.

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; gas sensors; indium compounds; internal stresses; optical constants; optical materials; semiconductor quantum wells; valence bands; Ga_xIn_1-x-yAs_ySb_1-y-GaSb; GaSb; III-V based components; air detection; atmospheric windows; conduction band; gas detection; noncooled detectors; optical fiber links; radar transmissions; semiconductor lasers; solid solution; source-detector direct transition; spectroscopic analysis; strained quantum well structure; valence discontinuity; Diode lasers; Gallium; Gas lasers; Quantum well lasers; Substrates; GaInAsSb/GaSb; GaInNAsSb/GaAs; Optoelectronic; Semiconductor; laser diode; quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International

Conference_Location

Riyadh

Print_ISBN

978-1-4577-0068-2

Electronic_ISBN

978-1-4577-0067-5

Type

conf

DOI

10.1109/SIECPC.2011.5876979

Filename

5876979