Title :
Directional emission InGaAsP/InP mirocylinder lasers
Author :
Wang, Shi-Jiang ; Huang, Yong-Zhen ; Yang, Yue-De ; Lin, Jian-Dong ; State, Y.D.
Author_Institution :
Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
Electrically injected InGaAsP/InP microcylinder lasers connected to an output waveguide are fabricated. Observed mode jump versus temperature with an interval of two times of longitudinal mode interval is agreement with that predicted by mode coupling.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; waveguide lasers; whispering gallery modes; InGaAsP-InP; directional emission mirocylinder lasers; electrically injected lasers; longitudinal mode; mode coupling; output waveguide; scanning electron microscopy; Etching; Indium phosphide; Laser modes; Laser theory; Optical coupling; Power generation; Scanning electron microscopy; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421928
