• DocumentCode
    1611735
  • Title

    Technology and reliability challenges - a foundry perspective [semiconductor foundry]

  • Author

    Sun, Jack Y -C

  • Author_Institution
    Logic Technol. Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
  • fYear
    2004
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    Many technology and reliability challenges emerge as we continue to push Moore´s Law. On the lithography front, ArF 193 nm liquid-immersion lithography offers great promise to provide us with cost-effective manufacturing solutions to the 32 nm generation. Transistor and interconnect scaling require new materials and structures that may not be conventional in the nanometer regime, e.g., strained-Si channel, high-κ gate dielectric, metal gate, non-bulk or non-planar CMOS structures, low-κ interconnects, and many SoC-enabling features. The foundry is in a unique position to work with the rest of the industry to overcome these challenges and provide cost-effective solutions in a collaborative and virtually integrated way. New methodology, infrastructure, circuit design, and system architecture solutions are needed for all phases and aspects of the technology development, qualification, and manufacturing, e.g., modeling, characterization, failure analysis, concurrent process and reliability engineering, design for manufacturing, and design for test/debug.
  • Keywords
    CMOS integrated circuits; design for manufacture; design for testability; dielectric thin films; failure analysis; foundries; integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; integrated circuit modelling; integrated circuit reliability; system-on-chip; ultraviolet lithography; 193 nm; 32 nm; ArF; SoC; characterization; concurrent process engineering; design for manufacturing; design for test/debug; failure analysis; high-k gate dielectric; interconnect scaling; liquid-immersion lithography; low-k interconnects; manufacturing; metal gate; modeling; nonbulk CMOS structures; nonplanar CMOS structures; qualification; reliability engineering; semiconductor foundry; strained-Si channel; technology development; transistor scaling; Circuit testing; Dielectric materials; Foundries; Integrated circuit interconnections; Lithography; Manufacturing processes; Moore´s Law; Semiconductor device manufacture; Semiconductor device reliability; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
  • Print_ISBN
    0-7803-8454-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2004.1345517
  • Filename
    1345517