DocumentCode
161177
Title
High-performance silicon modulator for integrated transceivers fabricated on 300-mm wafer
Author
Akiyama, Soramichi ; Baba, Toshihiko ; Imai, Masayoshi ; Mori, Marco ; Usuki, Tatsuya
Author_Institution
Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
fYear
2014
fDate
21-25 Sept. 2014
Firstpage
1
Lastpage
3
Abstract
We fabricated 25-Gb/s silicon modulators with side-wall gratings on a 300-mm wafer. They exhibited high modulation efficiency of VπL = 0.274 V-cm at 12.5 GHz in forward-biased mode. Equivalent-circuit parameters showed good in-wafer uniformity for stable frequency-compensated operations.
Keywords
diffraction gratings; elemental semiconductors; equivalent circuits; integrated optics; optical fabrication; optical modulation; optical transceivers; silicon; Si; bit rate 25 Gbit/s; equivalent-circuit parameters; forward-biased mode; frequency 12.5 GHz; high-performance silicon modulator; in-wafer uniformity; integrated transceivers; side-wall gratings; stable frequency-compensated operations; Frequency modulation; Gratings; Optical waveguides; Phase shifters; Photonics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2014 European Conference on
Conference_Location
Cannes
Type
conf
DOI
10.1109/ECOC.2014.6963947
Filename
6963947
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