• DocumentCode
    161177
  • Title

    High-performance silicon modulator for integrated transceivers fabricated on 300-mm wafer

  • Author

    Akiyama, Soramichi ; Baba, Toshihiko ; Imai, Masayoshi ; Mori, Marco ; Usuki, Tatsuya

  • Author_Institution
    Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
  • fYear
    2014
  • fDate
    21-25 Sept. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We fabricated 25-Gb/s silicon modulators with side-wall gratings on a 300-mm wafer. They exhibited high modulation efficiency of VπL = 0.274 V-cm at 12.5 GHz in forward-biased mode. Equivalent-circuit parameters showed good in-wafer uniformity for stable frequency-compensated operations.
  • Keywords
    diffraction gratings; elemental semiconductors; equivalent circuits; integrated optics; optical fabrication; optical modulation; optical transceivers; silicon; Si; bit rate 25 Gbit/s; equivalent-circuit parameters; forward-biased mode; frequency 12.5 GHz; high-performance silicon modulator; in-wafer uniformity; integrated transceivers; side-wall gratings; stable frequency-compensated operations; Frequency modulation; Gratings; Optical waveguides; Phase shifters; Photonics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication (ECOC), 2014 European Conference on
  • Conference_Location
    Cannes
  • Type

    conf

  • DOI
    10.1109/ECOC.2014.6963947
  • Filename
    6963947