Title :
On Certain Noise Properties of Field-Effect and Bipolar Transistors
Author :
Pospieszalski, Marian W.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville
Abstract :
In the noise modeling of FET´s, it has been previously shown that the allowed values of Tmin and N for an intrinsic chip have to satisfy inequality 1les4NT0/Tminles2. This inequality is shown in this paper to be valid for a much more general class of noisy two-ports. It is shown that the noise model of a FET with gate leakage and the noise model of an HBT satisfy this inequality. Close-form exact expressions for the noise parameters of a FET with gate leakage and of an HBT are given. Also, close-form approximate expressions valid at low and high frequencies for the noise parameters of a FET with gate leakage and of an HBT are given. Simple equivalence relations between these two sets of noise parameters are established.
Keywords :
bipolar transistors; field effect transistors; semiconductor device models; bipolar transistor; field-effect transistor; gate leakage; intrinsic chip; noise parameter; Bipolar transistors; Circuit noise; FETs; Gate leakage; HEMTs; Heterojunction bipolar transistors; MODFETs; Observatories; Radio astronomy; Temperature; Bipolar transistors; CMOS; FETs; HBT; noise; noise measurement;
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
DOI :
10.1109/MIKON.2006.4345385
