Performances of SiC Schottky rectifier in power factor correction

This paper deals with performances of silicon carbide power Schottky diodes compared with state-of-the-art high speed rectifiers. With high breakdown voltage, high gap energy and good thermal conductivity, SiC is a serious challenger for a new power semiconductor material. Here, the authors analyze static and switching behaviors in order to evaluate advantages by using SiC Schottky diodes instead of silicon devices. They also compare the thermal behavior of each kind of diode. Then, they present results of power factor correction applications using Schottky diodes.