Source-pull characterization of FinFET noise

We present results of a source-pull cold-hot on-wafer noise characterization of a FinFET with the gate 60 nm long and 45.6 μm wide. We performed this in the frequency range 0.8 - 8 GHz using the newest instrumentation available at present for measuring both scattering and noise parameters. From the output noise powers measured in frequency, we determined with our own method consisted characteristics of the four noise parameters for the whole structure comprising pads and interconnecting strips embedding the inner transistor. To get characteristics of the inner transistor, we de-embedded the results. We employed to this end a lumped-element equivalent circuit, we developed to represent effects of the transistor embedding on the basis of the scattering parameters measured for short and open circuited dummy structures up to 50 GHz. Though the de-embedded noise characteristics of the inner transistor exhibit large scatter, their averaged traces do evidence the low-noise and broadband performances of the FinFET. We explain reasons of this scatter and suggest potential ways for its decreasing when characterizing noise performance of nano-sized transistors.