Title :
Effects of base oxide in HfSiO/SiO2 high-k gate stacks
Author :
Wu, W.H. ; Chen, M.C. ; Wang, M.F. ; Hou, T.H. ; Yao, L.G. ; Jin, Y. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Abstract :
The electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.
Keywords :
MIS devices; dielectric thin films; electron traps; hafnium compounds; hole traps; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; silicon compounds; tunnelling; HfSiO-SiO2; NMOS capacitors; PMOS capacitors; RCS; base oxide thickness; charge trapping; dielectric breakdown; direct base oxide tunneling; flatband voltage shift; gate stack base oxide effects; high-k gate stacks; reliability; remote Coulomb scattering; threshold voltage instability; Breakdown voltage; Capacitance-voltage characteristics; Capacitors; Dielectric breakdown; Electric variables; High K dielectric materials; High-K gate dielectrics; Industrial electronics; Leakage current; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345526
